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| BPX 81 NPN-Silizium-Fototransistor Silicon NPN Phototransistor BPX 81 Mae in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale q Speziell geeignet fur Anwendungen im Bereich von 440 nm bis 1070 nm q Hohe Linearitat q Einstellige Zeilenbauform aus klarem Epoxy q Gruppiert lieferbar Anwendungen q Computer-Blitzlichtgerate q Miniaturlichtschranken fur Gleich- und Features q Especially suitable for applications from 440 nm to 1070 nm q High linearity q One-digit array package of transparent epoxy q Available in groups Applications q q q q Wechsellichtbetrieb q Industrieelektronik q "Messen/Steuern/Regeln" Computer-controlled flashes Miniature photointerrupters Industrial electronics For control and drive circuits Typ Type BPX 81 BPX 81-2 BPX 81-3 Bestellnummer Ordering Code Q62702-P20 Q62702-P43-S2 Q62702-P43-S3 Semiconductor Group 234 10.95 feo06021 BPX 81 Grenzwerte Maximum Ratings Bezeichnung Description Betriebs- und Lagertemperatur Operating and storage temperature range Lottemperatur bei Tauchlotung Lotstelle 2 mm vom Gehause, Lotzeit t 3 s Dip soldering temperature 2 mm distance from case bottom, soldering time t 3 s Lottemperatur bei Kolbenlotung Lotstelle 2 mm vom Gehause, Lotzeit t 5 s Iron soldering temperature 2 mm distance from case bottom, soldering time t 5 s Kollektor-Emitterspannung Collector-emitter voltage Kollektorstrom Collector current Kollektorspitzenstrom, < 10 s Collector surge current Verlustleistung, TA = 25 C Total power dissipation Warmewiderstand Thermal resistance Symbol Symbol Wert Value - 40 ... + 80 230 Einheit Unit C C Top; Tstg TS TS 300 C VCE IC ICS Ptot RthJA 32 50 200 90 750 V mA mA mW K/W Kennwerte (TA = 25 C, = 950 nm) Characteristics Bezeichnung Description Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit S = 10 % von Smax Spectral range of sensitivity S = 10 % of Smax Bestrahlungsempfindliche Flache Radiant sensitive area Symbol Symbol S max Wert Value 850 440 ... 1070 Einheit Unit nm nm A 0.17 mm2 Semiconductor Group 235 BPX 81 Kennwerte (TA = 25 C, = 950 nm) Characteristics (cont'd) Bezeichnung Description Abmessung der Chipflache Dimensions of chip area Abstand Chipoberflache zu Gehauseoberflache Distance chip front to case surface Halbwinkel Half angle Kapazitat Capacitance VCE = 0 V, f = 1 MHz, E = 0 Dunkelstrom Dark current VCE = 25 V, E = 0 Symbol Symbol Wert Value 0.6 x 0.6 1.3 ... 1.9 Einheit Unit mm x mm mm LxB LxW H 18 6 Grad deg. pF CCE ICEO 25 ( 200) nA Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern gekennzeichnet. The phototransistors are grouped according to their spectral sensitivity and distinguished by arabian figures. Bezeichnung Description Symbol Symbol -2 Fotostrom, = 950 nm Photocurrent Ee = 0.5 mW/cm2, VCE = 5 V IPCE Ev = 1000 Ix, Normlicht/standard light A, IPCE VCE = 5 V Anstiegszeit/Abfallzeit Rise and fall time IC = 1 mA, VCC = 5 V, RL = 1 k Kollektor-Emitter-Sattigungsspannung Collector-emitter saturation voltage IC = IPCEmin1) x 0.3 Ee = 0.5 mW/cm2 1) 1) Wert Value -3 -4 Einheit Unit 0.25 ... 0.50 1.4 5.5 0.40 ... 0.80 2.2 6 0.63 mA 3.4 mA 8 s t r, t f VCEsat 150 150 150 mV IPCEmin ist der minimale Fotostrom der jeweiligen Gruppe IPCEmin is the min. photocurrent of the specified group Semiconductor Group 236 BPX 81 Relative spectral sensitivity Srel = f () Photocurrent IPCE = f (Ee), VCE = 5 V Total power dissipation Ptot = f (TA) Photocurrent IPCE/IPCE25o = f (TA), VCE = 5 V Collector-emitter capacitance CCE = f (VCE), f = 1 MHz, E = 0 Dark current ICEO = f (VCE), E = 0 Directional characteristics Srel = f () Semiconductor Group 237 |
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